Impact of <inline-formula><tex-math notation="LaTeX">$V_\mathsf {th}$</tex-math></inline-formula> Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

MLA

Lu, Xuyang, et al. “Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors.” IEEE Transactions on Power Electronics, vol. 39, no. 9, Sept. 2024, pp. 11625–36. EBSCOhost, https://doi.org/10.1109/TPEL.2024.3405320.

APA

Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (2024). Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics, 39(9), 11625–11636. https://doi.org/10.1109/TPEL.2024.3405320

Chicago

Lu, Xuyang, Arnaud Videt, Soroush Faramehr, Ke Li, Vlad Marsic, Petar Igic, and Nadir Idir. 2024. “Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors.” IEEE Transactions on Power Electronics 39 (9): 11625–36. doi:10.1109/TPEL.2024.3405320.