Back to Search
Start Over
Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes
- Source :
- IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p827-832, 6p
- Publication Year :
- 2024
-
Abstract
- Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm2, which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. The results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.
Details
- Language :
- English
- ISSN :
- 00189383 and 15579646
- Volume :
- 71
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Periodical
- Accession number :
- ejs65168091
- Full Text :
- https://doi.org/10.1109/TED.2023.3330458