Back to Search Start Over

A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme

Authors :
Hsu, Hung-Hsi
Wen, Tai-Hao
Huang, Wei-Hsing
Khwa, Win-San
Lo, Yun-Chen
Jhang, Chuan-Jia
Chin, Yu-Hsiang
Chen, Yu-Chiao
Lo, Chung-Chuan
Liu, Ren-Shuo
Tang, Kea-Tiong
Hsieh, Chih-Cheng
Chih, Yu-Der
Chang, Tsung-Yung Jonathan
Chang, Meng-Fan
Source :
IEEE Journal of Solid-State Circuits; January 2024, Vol. 59 Issue: 1 p116-127, 12p
Publication Year :
2024

Abstract

On-chip non-volatile compute-in-memory (nvCIM) enables artificial intelligence (AI)-edge processors to perform multiply-and-accumulate (MAC) operations while enabling the non-volatile storage of weight data in power-off mode to enhance energy efficiency. However, the design challenges of nvCIM-based AI-edge processors include: 1) lack of a nvCIM-friendly computing flow; 2) a tradeoff between usage of memory devices versus process variations, computing yield and area overhead; 3) long computing latency and low energy efficiency; and 4) small-signal margin and large bitline current. This article presents an nvCIM-friendly AI-edge processor that uses a hybrid-mode resistive random access memory nvCIM (hmRe-nvCIM) macro to overcome the abovementioned challenges by three processor-level schemes: 1) a multimode nvCIM engine controller (mmCIM-EC); 2) a bitwise-input-sparsity and place-value-aware dynamic accumulation (BIS-PVA-DA); and 3) a bitwise weight column inversion (BWCI) and two macro-level schemes: 1) a dynamic-accumulation-aware current quantization (DACQ) and 2) a current–voltage-hybrid analog-to-digital converter (CVH-ADC). The proposed AI-edge processor fabricated using 22-nm technology achieved 51.4 TOPS/W and 472.7-<inline-formula> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> wake-up to response time, while the hmRe-nvCIM macro achieved 67.2 TOPS/W under 8-bit input, 8-bit weight, and 22- or 24-bit output precision.

Details

Language :
English
ISSN :
00189200 and 1558173X
Volume :
59
Issue :
1
Database :
Supplemental Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Periodical
Accession number :
ejs65078429
Full Text :
https://doi.org/10.1109/JSSC.2023.3314433