Cite
Effect of trapped charges and ionic charges distribution on n+-on-p HgCdTe photodiode properties
MLA
Hu, Juejun, et al. “Effect of Trapped Charges and Ionic Charges Distribution on N+-on-p HgCdTe Photodiode Properties.” Proceedings of SPIE, vol. 12966, no. 1, Dec. 2023, p. 129660W–129660W–7. EBSCOhost, https://doi.org/10.1117/12.3006193.
APA
Hu, J., Dong, J., Liu, Y., Qiu, Q., Liao, W., Niu, H., Yan, J., Dai, Z., Ma, T., Yang, S., & Lai, C. (2023). Effect of trapped charges and ionic charges distribution on n+-on-p HgCdTe photodiode properties. Proceedings of SPIE, 12966(1), 129660W–129660W–7. https://doi.org/10.1117/12.3006193
Chicago
Hu, Juejun, Jianji Dong, YueBo Liu, QiuLing Qiu, WenYuan Liao, Hao Niu, JiaHui Yan, et al. 2023. “Effect of Trapped Charges and Ionic Charges Distribution on N+-on-p HgCdTe Photodiode Properties.” Proceedings of SPIE 12966 (1): 129660W–129660W–7. doi:10.1117/12.3006193.