Pulsed Plasma Assisted Cl-Doped Graphene Nano Dots with Semiconducting Property

Herein we report the mass-production of Cl-doped graphene nanodots through the implementation of pulsed plasma on graphite rod in CHCl3medium. The Cl-doped graphene shows the band gap, which is assigned as p-type semiconductor by kelvin probe force microscopy (KPFM) measurement. The current findings revealed not only the semiconducting nano graphene with significant Cl insertion through pulsed plasma method but also opened a facile route for mass production of elemental doped 2-D layer materials using a wide range of organic solvent.We synthesized the semiconducting Cl-doped nano graphene dots and some other chlorinated carbon derivatives including hexachlorobenzene through exfoliate the graphite rod by the implementation of pulsed plasma in organic solvent. We propose that the current method of generating semiconducting Cl doped graphene materials can be a facile route for the insertion of the foreign elements with a wide range of organic solvent.