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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies
- Source :
- e-Prime - Advances in Electrical Engineering, Electronics and Energy; December 2023, Vol. 6 Issue: 1
- Publication Year :
- 2023
-
Abstract
- •RTP improvement of p-GaN can reduce the temperature degradation of on-resistance.•Mg concentration increase in p-GaN can reduce the temperature increase of on-resistance.•Dynamic on-resistance degradation is not changing with temperature increase.•Al% increase in AlGaN can lead to higher power levels but worse lifetime performances.
Details
- Language :
- English
- ISSN :
- 27726711
- Volume :
- 6
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- e-Prime - Advances in Electrical Engineering, Electronics and Energy
- Publication Type :
- Periodical
- Accession number :
- ejs64359923
- Full Text :
- https://doi.org/10.1016/j.prime.2023.100338