Heteroepitaxial growth of β-Ga2O3thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga2O3thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {2¯01} plane was obtained. XRD pole figure shows (2̅02) and (002) textures of the (2̅01) β-Ga2O3plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga2O3on diamond via sputtering, paving the way for scalable β-Ga2O3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.