Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures

The overall purpose of this work (including Part II in this issue) is to demonstrate the physical modeling of InP/InGaAs double heterojunction bipolar transistors (DHBTs) using a deterministic Boltzmann transport equation (BTE) solver, an augmented drift-diffusion (aDD) solver, and the HICUM/L2 compact model. This Part I introduces all tools that are employed for the simulations of DHBT structures in Part II and applies them to a GaAs <inline-formula> <tex-math notation="LaTeX">$\text {n}^{+}\text {nn}^{+}$ </tex-math></inline-formula> sample structure for illustrating the calibration of the aDD solver by BTE results and physical effects that occur in such devices. After the calibration, aDD and BTE solvers are shown to produce comparable results.