Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism

MLA

Nie, Bowen, et al. “Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism.” IEEE Electron Device Letters, vol. 44, no. 9, Sept. 2023, pp. 1456–59. EBSCOhost, https://doi.org/10.1109/LED.2023.3296797.

APA

Nie, B., Huang, Y., Wang, Y., Chen, Y., Ding, Y., Wang, B., Yang, Y., Jiang, P., Wei, W., Gong, T., & Luo, Q. (2023). Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism. IEEE Electron Device Letters, 44(9), 1456–1459. https://doi.org/10.1109/LED.2023.3296797

Chicago

Nie, Bowen, Yuanquan Huang, Yuan Wang, Yuting Chen, Yaxin Ding, Boping Wang, Yang Yang, et al. 2023. “Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism.” IEEE Electron Device Letters 44 (9): 1456–59. doi:10.1109/LED.2023.3296797.