One-Step Passivation of Both Sulfur Vacancies and SiO2Interface Traps of MoS2Device

MLA

Ahn, Byungwook, et al. “One-Step Passivation of Both Sulfur Vacancies and SiO2Interface Traps of MoS2Device.” Nano Letters, vol. 23, no. 17, Sept. 2023, pp. 7927–33. EBSCOhost, https://doi.org/10.1021/acs.nanolett.3c01753.

APA

Ahn, B., Kim, Y., Kim, M., Yu, H. M., Ahn, J., Sim, E., Ji, H., Gul, H. Z., Kim, K. S., Ihm, K., Lee, H., Kim, E. K., & Lim, S. C. (2023). One-Step Passivation of Both Sulfur Vacancies and SiO2Interface Traps of MoS2Device. Nano Letters, 23(17), 7927–7933. https://doi.org/10.1021/acs.nanolett.3c01753

Chicago

Ahn, Byungwook, Yoonsok Kim, Meeree Kim, Hyang Mi Yu, Jaehun Ahn, Eunji Sim, Hyunjin Ji, et al. 2023. “One-Step Passivation of Both Sulfur Vacancies and SiO2Interface Traps of MoS2Device.” Nano Letters 23 (17): 7927–33. doi:10.1021/acs.nanolett.3c01753.