Back to Search
Start Over
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
- Source :
- IEEE Electron Device Letters; August 2023, Vol. 44 Issue: 8 p1276-1279, 4p
- Publication Year :
- 2023
-
Abstract
- Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in current known as negative differential resistance. This feature is usually related to electrochemical reactions between the reactive metal and <inline-formula> <tex-math notation="LaTeX">$\text{I}^{-}$ </tex-math></inline-formula> ions, and to air exposure. However, in devices with low-reactive electrodes, its origin is still under debate. In this work, we propose a theoretical model based on ionic-electronic drift-diffusion. This model sheds light into the ionic-electronic processes that shape hysteresis, and it helps to explain the appearance and evolution of a negative resistance in memristors with low-reactive contacts and capacitive hysteresis. Finally, experimental J-V curves are presented to validate the proposed model.
Details
- Language :
- English
- ISSN :
- 07413106 and 15580563
- Volume :
- 44
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Periodical
- Accession number :
- ejs63679518
- Full Text :
- https://doi.org/10.1109/LED.2023.3288298