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SiC MOSFETs Biased C-V Curves: A Temperature Investigation

SiC MOSFETs Biased C-V Curves: A Temperature Investigation

Authors :
Matacena, Ilaria
Maresca, Luca
Riccio, Michele
Irace, Andrea
Breglio, Giovanni
Castellazzi, Alberto
Daliento, Santolo
Source :
Materials Science Forum; June 2023, Vol. 1091 Issue: 1 p31-36, 6p
Publication Year :
2023

Abstract

In this paper, SiC MOSFETs capacitance is monitored when a DC bias is applied between Drain and Source. The arising capacitance exhibits a sharp peak in the inversion region which is related to the SiC/SiO<subscript>2</subscript> interface traps properties. Temperature effects on such peak are investigated using both experimental and numerical results. The peak shifts toward lower Gate voltage as temperature increases, in agreement with the threshold voltage reduction at higher temperature.

Details

Language :
English
ISSN :
02555476 and 16629752
Volume :
1091
Issue :
1
Database :
Supplemental Index
Journal :
Materials Science Forum
Publication Type :
Periodical
Accession number :
ejs63343269
Full Text :
https://doi.org/10.4028/p-mqpk26