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SiC MOSFETs Biased C-V Curves: A Temperature Investigation
SiC MOSFETs Biased C-V Curves: A Temperature Investigation
- Source :
- Materials Science Forum; June 2023, Vol. 1091 Issue: 1 p31-36, 6p
- Publication Year :
- 2023
-
Abstract
- In this paper, SiC MOSFETs capacitance is monitored when a DC bias is applied between Drain and Source. The arising capacitance exhibits a sharp peak in the inversion region which is related to the SiC/SiO<subscript>2</subscript> interface traps properties. Temperature effects on such peak are investigated using both experimental and numerical results. The peak shifts toward lower Gate voltage as temperature increases, in agreement with the threshold voltage reduction at higher temperature.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 1091
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs63343269
- Full Text :
- https://doi.org/10.4028/p-mqpk26