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Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides

Authors :
Aljarb, Areej
Min, Jiacheng
Hakami, Mariam
Fu, Jui-Han
Albaridy, Rehab
Wan, Yi
Lopatin, Sergei
Kaltsas, Dimitrios
Naphade, Dipti
Yengel, Emre
Hedhili, Mohamed Nejib
Sait, Roaa
Emwas, Abdul-Hamid
Kutbee, Arwa
Alsabban, Merfat
Huang, Kuo-Wei
Shih, Kaimin
Tsetseris, Leonidas
Anthopoulos, Thomas D.
Tung, Vincent
Li, Lain-Jong
Source :
ACS Nano; June 2023, Vol. 17 Issue: 11 p10010-10018, 9p
Publication Year :
2023

Abstract

Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials’ properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.

Details

Language :
English
ISSN :
19360851 and 1936086X
Volume :
17
Issue :
11
Database :
Supplemental Index
Journal :
ACS Nano
Publication Type :
Periodical
Accession number :
ejs63153309
Full Text :
https://doi.org/10.1021/acsnano.2c12103