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Study of selective isotropic etching effects of Si1-xGexin gate-all-around nanosheet transistor process
- Source :
- Proceedings of SPIE; May 2023, Vol. 12499 Issue: 1 p124990K-124990K-7, 1124918p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 12499
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs63133598
- Full Text :
- https://doi.org/10.1117/12.2658312