Multi-core/shell SiO2@Al2O3nanostructures deposited on Ti3AlC2to enhance high-temperature stability and microwave absorption properties

Poor high-temperature stability (HTS) and weak microwave absorption performance (MAP) are a major restriction for wave-absorbing materials in elevated temperature ambient. Consequently, the Stöber process and the sol–gel method are first devised and used to create multi-core/shell SiO2@Al2O3nanostructures (MCSNs) on Ti3AlC2(TAC). The MCSNs with a thickness of 135–215 nm raise the starting oxidation temperature of the matrix by 400°C. Furthermore, the weight gain drops from 17.44 to 2.32% within 1 h at 800°C. The effective absorption bandwidth with a reflection loss (RL) ≤ −10 dB of the MCSNs-coated TAC is 3.25 GHz (8.68–11.27 and 11.63–12.29 GHz) at a thickness of 2.0 mm, which is 4.7 times that of the matrix. The minimum RL is reduced by a factor of 2.77 from −10.68 to −29.55 dB. The enhanced MAP is due to the introduced multiple reflection events and scattering mechanism as well as the enhanced electronic polarization, interface polarization, and polarization relaxation. The growth of the MCSNs provides a reference for the design and preparation of bifunctional materials with good HTS and MAP.