Cite
Monolithic silicon avalanche photodetector utilizing surface state defects operating at 1550 nm
MLA
Reed, Graham T., et al. “Monolithic Silicon Avalanche Photodetector Utilizing Surface State Defects Operating at 1550 Nm.” Proceedings of SPIE, vol. 12426, no. 1, Mar. 2023, pp. 1242609-1242609–5. EBSCOhost, https://doi.org/10.1117/12.2651724.
APA
Reed, G. T., Knights, A. P., Gao, Y., Guo, F., Mascher, P., & Knights, A. P. (2023). Monolithic silicon avalanche photodetector utilizing surface state defects operating at 1550 nm. Proceedings of SPIE, 12426(1), 1242609-1242609–5. https://doi.org/10.1117/12.2651724
Chicago
Reed, Graham T., Andrew P. Knights, Yuxuan Gao, Feng Guo, Peter Mascher, and Andrew P. Knights. 2023. “Monolithic Silicon Avalanche Photodetector Utilizing Surface State Defects Operating at 1550 Nm.” Proceedings of SPIE 12426 (1): 1242609-1242609–5. doi:10.1117/12.2651724.