Photoluminescence properties of heavily Sb doped Ge1-xSnxand heterostructure design favorable for n+-Ge1-xSnxactive layer

MLA

Zhang, Shiyu, et al. “Photoluminescence Properties of Heavily Sb Doped Ge1-XSnxand Heterostructure Design Favorable for N+-Ge1-XSnxactive Layer.” Japanese Journal of Applied Physics, vol. 61, no. Supplement 1, Jan. 2022, p. SA1004. EBSCOhost, https://doi.org/10.35848/1347-4065/ac25da.

APA

Zhang, S., Fukuda, M., Jeon, J., Sakashita, M., Shibayama, S., & Nakatsuka, O. (2022). Photoluminescence properties of heavily Sb doped Ge1-xSnxand heterostructure design favorable for n+-Ge1-xSnxactive layer. Japanese Journal of Applied Physics, 61(Supplement 1), SA1004. https://doi.org/10.35848/1347-4065/ac25da

Chicago

Zhang, Shiyu, Masahiro Fukuda, Jihee Jeon, Mitsuo Sakashita, Shigehisa Shibayama, and Osamu Nakatsuka. 2022. “Photoluminescence Properties of Heavily Sb Doped Ge1-XSnxand Heterostructure Design Favorable for N+-Ge1-XSnxactive Layer.” Japanese Journal of Applied Physics 61 (Supplement 1): SA1004. doi:10.35848/1347-4065/ac25da.