A Temperature-Dependent <inline-formula><tex-math notation="LaTeX">$dV_{CE}/dt$</tex-math></inline-formula> and <inline-formula><tex-math notation="LaTeX">$dI_{C}/dt$</tex-math></inline-formula> Model for Field-Stop IGBT at Turn-on Transient

In this article, a complete expression for <inline-formula><tex-math notation="LaTeX">$dV_{CE}/dt$</tex-math></inline-formula> and <inline-formula><tex-math notation="LaTeX">$dI_{C}/dt$</tex-math></inline-formula> at turn-<sc>on</sc> transient of field-stop (FS) insulated gate bipolar transistor (IGBT) is proposed. With numerical simulation utilized, the critical stray elements and internal physics which have a significant impact on turn-<sc>on</sc> behavior of FS IGBT are identified. Based on the improved understanding on the turn-<sc>on</sc> behavior, the turn-<sc>on</sc> transient is divided into two phases and the equivalent circuits of each phase are obtained. The analytical expressions of <inline-formula><tex-math notation="LaTeX">$dV_{CE}/dt$</tex-math></inline-formula> and <inline-formula><tex-math notation="LaTeX">$dI_{C}/dt$</tex-math></inline-formula> during the turn-<sc>on</sc> transient are thereby derived based on the equivalent circuits. The temperature dependency on the turn-<sc>on</sc> characteristics of FS IGBT is identified by the experimental data. The temperature-dependent models of various device parameters are proposed to describe the temperature dependency. In the end, the double-pulse test is performed on a 650-V FS IGBT and a 1200-V FS IGBT. The good agreement between the test and analytically derived results validates that the proposed FS IGBT model can accurately predict the <inline-formula><tex-math notation="LaTeX">$dV_{CE}/dt$</tex-math></inline-formula> and <inline-formula><tex-math notation="LaTeX">$dI_{C}/dt$</tex-math></inline-formula> during the turn-<sc>on</sc> transient.