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Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling

Authors :
Lin, Yuxuan Cosmi
Lin, Cheng-Ming
Chen, Hung-Yu
Vaziri, Sam
Bao, Xinyu
Woon, Wei-Yen
Wang, Han
Liao, Szuya Sandy
Source :
IEEE Transactions on Electron Devices; 2023, Vol. 70 Issue: 4 p1454-1473, 20p
Publication Year :
2023

Abstract

The 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> gate dielectrics, low-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective.

Details

Language :
English
ISSN :
00189383 and 15579646
Volume :
70
Issue :
4
Database :
Supplemental Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Periodical
Accession number :
ejs62630998
Full Text :
https://doi.org/10.1109/TED.2022.3224100