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Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based micro-LEDs for High-Speed Visible Light Communication
- Source :
- Journal of Lightwave Technology; 2023, Vol. 41 Issue: 5 p1480-1486, 7p
- Publication Year :
- 2023
-
Abstract
- With ever-growing demand for 6G networks technology, visible light communication (VLC) as a vital component of 6G has challenging requirement for superior performance of light source. Herein, 20 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m blue micro-LED fabricated on 2-inch c-plane GaN freestanding substrate with high bandwidth over 1 GHz was first demonstrated, and the systematic comparisons to sapphire-substrate micro-LED from the epitaxial materials characterization to optoelectronic properties as well as communication performance were further conducted. GaN-substrate LED wafer has high crystal quality with lower threading dislocation density (TDD), which is two orders of magnitude lower than that of sapphire-substrate LED wafer. The much lower TDD of GaN-substrate LED wafer and better heat dissipation of GaN substrate offer GaN-substrate micro-LED great advantages in optoelectronic properties as well as communication performance. GaN-substrate micro-LED exhibited higher light output power (LOP) especially at high operating current, which is improved by <inline-formula><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula>21% at 96 mA compared to that of sapphire substrate. Also, GaN-substrate micro-LED achieved a relatively higher bandwidth of 1.282 GHz while maintaining higher LOP with lower operating voltage. And a higher data rate of 4.48 Gbps under 1 m free space link was obtained by GaN-substrate micro-LED, proving it being a promising candidate in high-speed VLC.
Details
- Language :
- English
- ISSN :
- 07338724 and 15582213
- Volume :
- 41
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Journal of Lightwave Technology
- Publication Type :
- Periodical
- Accession number :
- ejs62432707
- Full Text :
- https://doi.org/10.1109/JLT.2022.3224612