Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED

MLA

Susumago, Yuki, et al. “Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With ΜLED.” IEEE Electron Device Letters, vol. 44, no. 3, Jan. 2023, pp. 500–03. EBSCOhost, https://doi.org/10.1109/LED.2023.3237834.

APA

Susumago, Y., Liu, C., Hoshi, T., Shen, J., Shinoda, A., Kino, H., Tanaka, T., & Fukushima, T. (2023). Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED. IEEE Electron Device Letters, 44(3), 500–503. https://doi.org/10.1109/LED.2023.3237834

Chicago

Susumago, Yuki, Chang Liu, Tadaaki Hoshi, Jiayi Shen, Atsushi Shinoda, Hisashi Kino, Tetsu Tanaka, and Takafumi Fukushima. 2023. “Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With ΜLED.” IEEE Electron Device Letters 44 (3): 500–503. doi:10.1109/LED.2023.3237834.