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Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology
- Source :
- ECS Transactions; September 2022, Vol. 109 Issue: 4
- Publication Year :
- 2022
-
Abstract
- In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 109
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs61803701
- Full Text :
- https://doi.org/10.1149/10904.0035ecst