Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm2. The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm−1. These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.