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Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures
- Source :
- Journal of the Electrochemical Society; January 2012, Vol. 159 Issue: 4
- Publication Year :
- 2012
-
Abstract
- The effect of deposition temperature and post deposition annealing (PDA) on the electrical properties of HfO2films grown on a Ge substrate by atomic layer deposition (ALD) was investigated. The HfO2films deposited at 280°C (280°C-HfO2) showed a large capacitance-voltage (C-V) hysteresis, but it was significantly reduced at 200°C (200°C-HfO2). Further reduction of deposition temperature to 160°C resulted in the abrupt increase of C-V hysteresis. The reduction of C-V hysteresis was originated from the smaller degree of intermixing between the HfO2and Ge substrate with decreasing temperature, while the increase of C-V hysteresis comes from the low density of films grown at low temperatures. The C-V hysteresis characteristics were also strongly influenced by PDA temperatures. PDA temperatures higher than 550°C induced a large C-V hysteresis regardless of deposition temperature. Interestingly, after the PDA process, the HfO2grown at 200°C is crystallized to the tetragonal phase, while the HfO2grown at 280°C is crystallized to the monoclinic phase. These different crystalline phases result in a lower equivalent oxide thickness in the 200°C-HfO2compared to the 280°C-HfO2
Details
- Language :
- English
- ISSN :
- 00134651 and 19457111
- Volume :
- 159
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- Journal of the Electrochemical Society
- Publication Type :
- Periodical
- Accession number :
- ejs61767184
- Full Text :
- https://doi.org/10.1149/2.014204jes