Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory

We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO2-LaAlO3]-[As+-implanted ZrON]-[LaAlO3-SiO2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85oC, and an endurance window of 5.1 V after 105 cycles under fast 100 μs and low μ16 V program/erase. The performance of As+-implanted ZrON is significantly better than that of stacked Si3N4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.