Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

MLA

Lopes, J.Marcelo, et al. “Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and Their Integration as High-k Gate Dielectrics in MOSFET Devices.” ECS Transactions, vol. 35, no. 4, Apr. 2011. EBSCOhost, https://doi.org/10.1149/1.3572299.

APA

Lopes, J. M., Durğun Özben, E., Schnee, M., Luptak, R., Nichau, A., Tiedemann, A., Yu, W., Zhao, Q.-T., Besmehn, A., Breuer, U., Luysberg, M., Lenk, S., Schubert, J., & Mantl, S. (2011). Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices. ECS Transactions, 35(4). https://doi.org/10.1149/1.3572299

Chicago

Lopes, J. Marcelo, Eylem Durğun Özben, Michael Schnee, Roman Luptak, Alexander Nichau, Andreas Tiedemann, Wenjie Yu, et al. 2011. “Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and Their Integration as High-k Gate Dielectrics in MOSFET Devices.” ECS Transactions 35 (4). doi:10.1149/1.3572299.