Near IR Photodiodes with Tunable Absorption Edge Based on Ge1-ySnyAlloys Integrated on Silicon

Ge1-ySny materials represent a viable path to silicon-based electronic devices for optical communications. In this paper, we present the results of heterostructure photodiodes fabricated from Ge0.99Sn0.01 films grown on Si(100) substrates. The results are compared with those of similarly fabricated devices from pure Ge and Ge0.98Sn0.02 to demonstrate the tunability of device response through precise control of material composition.