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Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs

Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs

Authors :
Hashemi, Pouya
Canonico, Michael
Yang, Joel K.W.
Gomez, Leonardo
Berggren, Karl K.
Hoyt, Judy
Source :
ECS Transactions; October 2008, Vol. 16 Issue: 10
Publication Year :
2008

Abstract

Suspended strained-Si nano-wires (NWs) were fabricated from a highly biaxially strained-Si substrate (with an initial stress of 2.16 GPa). Using e-beam lithography, ~25nm thick NWs with the widths in the range of 20 to 80 nm were fabricated and the stress was investigated by UV micro-Raman spectroscopy. Suspended NWs are strained to an average uniaxial tensile stress level of ~2.1 GPa which is almost independent of NW width, in the range studied in this work. Ultra-dense (25 NWs per micron) sub-20 nm suspended strained-Si NWs were fabricated using resolution-enhanced lithography to improve the Raman signal-to-noise ratio. A tensile in-plane stress level of 1.7GPa was measured for 18 nm-wide NWs at 40 nm pitch. Gate-all-around n-MOSFETs were fabricated based on these strained-Si NWs. Electrical measurements on these MOSFETs demonstrate near ideal subthreshold behavior, very high on-to-off ratio and current drive and transconductance enhancement of ~2X over unstrained NWs.

Details

Language :
English
ISSN :
19385862 and 19386737
Volume :
16
Issue :
10
Database :
Supplemental Index
Journal :
ECS Transactions
Publication Type :
Periodical
Accession number :
ejs61747009
Full Text :
https://doi.org/10.1149/1.2986753