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A nonchlorinated solvent-processed polymer semiconductor for high-performance ambipolar transistors

Authors :
Yang, Jie
Jiang, Yaqian
Zhao, Zhiyuan
Yang, Xueli
Zhang, Zheye
Chen, Jinyang
Li, Junyu
Shi, Wei
Wang, Shuai
Guo, Yunlong
Liu, Yunqi
Source :
National Science Review; April 2022, Vol. 9 Issue: 4
Publication Year :
2022

Abstract

Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs) and polymer solar cells (PSCs). Although several high-performance ambipolar polymers have been developed, their optoelectronic devices are generally processed from toxic chlorinated solvents. To achieve the commercial applications of organic FETs (OFETs), the polymers should be processed from nonchlorinated solvents, instead of chlorinated solvents. However, most conjugated polymers show poor solubility in nonchlorinated solvents. It is of great importance to develop ambipolar polymers that can be processed from nonchlorinated solvents. Here, we develop a nonchlorinated solvent processed polymer named poly[7-fluoro-N, N′-di(4-decyltetradecyl)-7′-azaisoindigo-6′,6″-(thieno[3,2-b]thiophene-2,5-diyl)-7‴-fluoro-N″, N‴-di(4-decyltetradecyl)-7″-azaisoindigo-6,6‴-([2,2″-bithiophene]-5,5″-diyl)] (PITTI-BT) by designing a monomer with a large molar mass. The polymer displays good solubility in p-xylene (PX). Well-aligned films of PITTI-BT are achieved by an off-center spin-coating (SC) method. Based on the high-quality films, the OFETs fabricated from PX solution achieve record ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm2V−1s−1, respectively. The combination of nonchlorinated solvents and good alignment process offers an effective and eco-friendly approach to obtain high-performance ambipolar transistors.A nonchlorinated solvent-processed isoindigo-based polymer is developed, which can form well-aligned films and achieve outstanding ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm2V−1s−1in organic field-effect transistors.

Details

Language :
English
ISSN :
20955138 and 2053714X
Volume :
9
Issue :
4
Database :
Supplemental Index
Journal :
National Science Review
Publication Type :
Periodical
Accession number :
ejs60893656
Full Text :
https://doi.org/10.1093/nsr/nwab145