Cite
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
MLA
Holewa, Paweł, et al. “Droplet Epitaxy Symmetric InAs/InP Quantum Dots for Quantum Emission in the Third Telecom Window: Morphology, Optical and Electronic Properties.” Nano-Photonics, vol. 11, no. 8, Apr. 2022, pp. 1515–26. EBSCOhost, https://doi.org/10.1515/nanoph-2021-0482.
APA
Holewa, P., Kadkhodazadeh, S., Gawełczyk, M., Baluta, P., Musiał, A., Dubrovskii, V. G., Syperek, M., & Semenova, E. (2022). Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties. Nano-Photonics, 11(8), 1515–1526. https://doi.org/10.1515/nanoph-2021-0482
Chicago
Holewa, Paweł, Shima Kadkhodazadeh, Michał Gawełczyk, Paweł Baluta, Anna Musiał, Vladimir G. Dubrovskii, Marcin Syperek, and Elizaveta Semenova. 2022. “Droplet Epitaxy Symmetric InAs/InP Quantum Dots for Quantum Emission in the Third Telecom Window: Morphology, Optical and Electronic Properties.” Nano-Photonics 11 (8): 1515–26. doi:10.1515/nanoph-2021-0482.