Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

MLA

Zagni, Nicolò, and Muhammad Ashraful Alam. “Reliability Physics of Ferroelectric/Negative Capacitance Transistors for Memory/Logic Applications: An Integrative Perspective.” Journal of Materials Research, no. Preprints, Jan. 2024, pp. 1–11. EBSCOhost, https://doi.org/10.1557/s43578-021-00420-1.

APA

Zagni, N., & Alam, M. A. (2024). Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective. Journal of Materials Research, Preprints, 1–11. https://doi.org/10.1557/s43578-021-00420-1

Chicago

Zagni, Nicolò, and Muhammad Ashraful Alam. 2024. “Reliability Physics of Ferroelectric/Negative Capacitance Transistors for Memory/Logic Applications: An Integrative Perspective.” Journal of Materials Research, no. Preprints (January): 1–11. doi:10.1557/s43578-021-00420-1.