High-Temperature-Induced Intervalley Carrier Transfer in Two-Dimensional Semiconductors: WSe2versus WS2

MLA

Zhu, Sixin, et al. “High-Temperature-Induced Intervalley Carrier Transfer in Two-Dimensional Semiconductors: WSe2versus WS2.” The Journal of Physical Chemistry - Part C, vol. 125, no. 43, Nov. 2021, pp. 23922–28. EBSCOhost, https://doi.org/10.1021/acs.jpcc.1c07144.

APA

Zhu, S., Wu, Y., Tao, R., Liang, W., Wu, Y., Lin, H., Huang, L.-B., Gong, Z., & Qin, Q. (2021). High-Temperature-Induced Intervalley Carrier Transfer in Two-Dimensional Semiconductors: WSe2versus WS2. The Journal of Physical Chemistry - Part C, 125(43), 23922–23928. https://doi.org/10.1021/acs.jpcc.1c07144

Chicago

Zhu, Sixin, Yongpeng Wu, Ran Tao, Wei Liang, Yunfan Wu, Huihong Lin, Long-Biao Huang, Zhirui Gong, and Qi Qin. 2021. “High-Temperature-Induced Intervalley Carrier Transfer in Two-Dimensional Semiconductors: WSe2versus WS2.” The Journal of Physical Chemistry - Part C 125 (43): 23922–28. doi:10.1021/acs.jpcc.1c07144.