Back to Search
Start Over
Enhancing the quantum confinement effect by means of quaternary AlxGayIn1-x-yAs barrier material in type-I InAs/InxGa1-xAs SML QDs for laser applications
- Source :
- Proceedings of SPIE; May 2021, Vol. 11777 Issue: 1 p117770Y-117770Y-8, 1059939p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 11777
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs56855007
- Full Text :
- https://doi.org/10.1117/12.2589249