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Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices
- Source :
- Proceedings of SPIE; April 2021, Vol. 11687 Issue: 1 p116871I-116871I-8, 1051848p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 11687
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs56469154
- Full Text :
- https://doi.org/10.1117/12.2587997