Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures

We have evaluated the electron mobility in BaMgF4/AlGaAs/GaAs(100) high-electron-mobility transistor (HEMT) structures using a contactless mobility measurement system. It has been found that the HEMT structure can be prevented from deteriorating when the BaMgF4layer is properly deposited, and that dependence of the electron mobility on the N-AlGaAs layer thickness is explained using a simple parallel conduction theory. It has also been found that the electron mobility in the structures is decreased from 6300 cm2/(V·s) to 3300 cm2/(V·s) at room temperature as the rmBaMgF4growth temperature is increased from 550° C to 650° C.