Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation

We have grown high-conductivity textured ZnO films by the photo-MOCVD method using DEZ (diethylzinc) and H2O as reactant gases. It was found that the UV light irradiation during the growth was very effective in the improvement of electron mobility. The improvement of the electron mobility could be caused by the chemisorption of the oxygen at the grain boundaries. The boron-doped ZnO films were also grown by photo-MOCVD using B2H6as dopant gas. The resistivity of the films grown with UV irradiation was one order of magnitude less than that grown without UV irradiation, and the minimum resistivity of 6.8×10-4?·cm was obtained by the photo-MOCVD method.