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Cesium-induced Reconstruction on Si(113)3 × 2 Surface Studied by Low Energy Electron Diffraction and X-ray Photoelectron Spectroscopy
- Source :
- Japanese Journal of Applied Physics; May 1997, Vol. 36 Issue: 5 p2833-2833, 1p
- Publication Year :
- 1997
-
Abstract
- We have investigated Cs-induced reconstruction on the Si(113)3×2 surface using low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). For Cs deposition at room temperature, the (3×1) LEED pattern was observed for a wide Cs coverage range. At high substrate temperatures, the (3×1), (1×5+2×) and (2×2) phases were observed with increasing Cs deposition time. The relative Cs saturation coverages of (3×1)-Cs at RT and (2×2)-Cs at 300°C were measured from Cs 3d/Si 2p core level XPS intensity ratios. The results are summarized in a phase diagram as a function of the Cs deposition time.
Details
- Language :
- English
- ISSN :
- 00214922 and 13474065
- Volume :
- 36
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs56117490
- Full Text :
- https://doi.org/10.1143/JJAP.36.2833