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Cesium-induced Reconstruction on Si(113)3 × 2 Surface Studied by Low Energy Electron Diffraction and X-ray Photoelectron Spectroscopy

Authors :
Ki-Seok An, Ki-Seok An
Chan-Cuk Hwang, Chan-Cuk Hwang
Rae-Jun Park, Rae-Jun Park
Ju-Bong Lee, Ju-Bong Lee
Jeong-Seon Kim, Jeong-Seon Kim
Chong-Yun Park, Chong-Yun Park
Soon-Bo Lee, Soon-Bo Lee
Akio Kimura, Akio Kimura
Akito Kakizaki, Akito Kakizaki
Source :
Japanese Journal of Applied Physics; May 1997, Vol. 36 Issue: 5 p2833-2833, 1p
Publication Year :
1997

Abstract

We have investigated Cs-induced reconstruction on the Si(113)3×2 surface using low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). For Cs deposition at room temperature, the (3×1) LEED pattern was observed for a wide Cs coverage range. At high substrate temperatures, the (3×1), (1×5+2×) and (2×2) phases were observed with increasing Cs deposition time. The relative Cs saturation coverages of (3×1)-Cs at RT and (2×2)-Cs at 300°C were measured from Cs 3d/Si 2p core level XPS intensity ratios. The results are summarized in a phase diagram as a function of the Cs deposition time.

Details

Language :
English
ISSN :
00214922 and 13474065
Volume :
36
Issue :
5
Database :
Supplemental Index
Journal :
Japanese Journal of Applied Physics
Publication Type :
Periodical
Accession number :
ejs56117490
Full Text :
https://doi.org/10.1143/JJAP.36.2833