Design of ultra-high storage density probe memory with patterned Ge2Sb2Te5layer and continuous capping layer

A novel design of patterned phase-change electrical probe memory with a continuous capping layer is proposed. To achieve ultra-high density, whilst having immunity to thermal and readout cross-talk interference, the devised memory is optimized to have a continuous 40 nm TiN underlayer, continuous 2 nm DLC capping layer and 5 nm Ge2Sb2Te5layer patterned into numerous cells, separated by a 5 nm thick insulator region. The feasibility of using the designed device to achieve ultra-high density, superb anti-interference and a simplified fabrication process, has been demonstrated according to a developed full 3D electro-thermal and phase-change model.