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Stability of diamond/Si bonding interface during device fabrication process
- Source :
- Applied Physics Express (APEX); January 2019, Vol. 12 Issue: 1 p016501-016501, 1p
- Publication Year :
- 2019
-
Abstract
- Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5 nm thick SixCx-1layer was formed at the interface with annealing at 1000 °C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI.
Details
- Language :
- English
- ISSN :
- 18820778 and 18820786
- Volume :
- 12
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Applied Physics Express (APEX)
- Publication Type :
- Periodical
- Accession number :
- ejs55910848
- Full Text :
- https://doi.org/10.7567/1882-0786/aaeedd