Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate

MLA

Die, Junhui, et al. “Reduction in Crystalline Quality Anisotropy for Non-Polar a-Plane GaN Directly Grown on Titanium Patterned Sapphire Substrate.” Applied Physics Express (APEX), vol. 12, no. 1, Jan. 2019, p. 015503. EBSCOhost, https://doi.org/10.7567/1882-0786/aaeedb.

APA

Die, J., Wang, C., Yan, S., Hu, X., Hu, W., Ma, Z., Deng, Z., Du, C., Wang, L., Jia, H., Wang, W., Jiang, Y., & Chen, H. (2019). Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate. Applied Physics Express (APEX), 12(1), 015503. https://doi.org/10.7567/1882-0786/aaeedb

Chicago

Die, Junhui, Caiwei Wang, Shen Yan, Xiaotao Hu, Wei Hu, Ziguang Ma, Zhen Deng, et al. 2019. “Reduction in Crystalline Quality Anisotropy for Non-Polar a-Plane GaN Directly Grown on Titanium Patterned Sapphire Substrate.” Applied Physics Express (APEX) 12 (1): 015503. doi:10.7567/1882-0786/aaeedb.