Improved charge trapping characteristics of multilayered ZrxSi1?xO2films with a bidirectional terraced bandgap structure

A multilayered ZrxSi1?xO2trapping layer with a bidirectional terraced bandgap structure is proposed for a charge-trapping memory device. It is observed that the bidirectional terraced bandgap structure changes the electron storage and loss behaviors, and a 15.8 V memory window along with a 2.03 × 1013cm?2trap density, a low charge loss of 14.5% at 200 °C up to 105s, a 120 °C turning temperature between charge-loss-insensitive and charge-loss-sensitive regions, and a high program/erase speed can be achieved. Hence, the formation of a bidirectional terraced bandgap structure is a promising means for future charge-trapping memory applications.