Back to Search
Start Over
Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices
- Source :
- Nature Nanotechnology; 20210101, Issue: Preprints p1-7, 7p
- Publication Year :
- 2021
-
Abstract
- Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µFE), current ratio (ION/IOFF) and switching time (τS) for liquid-gated transistors, reaching 10−2cm2V−1s−1, 104and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications.
Details
- Language :
- English
- ISSN :
- 17483387 and 17483395
- Issue :
- Preprints
- Database :
- Supplemental Index
- Journal :
- Nature Nanotechnology
- Publication Type :
- Periodical
- Accession number :
- ejs55435271
- Full Text :
- https://doi.org/10.1038/s41565-021-00857-9