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Energy-Level Alignment Tuning at Tetracene/c-Si Interfaces

Authors :
Niederhausen, Jens
MacQueen, Rowan W.
Özkol, Engin
Gersmann, Clemens
Futscher, Moritz H.
Liebhaber, Martin
Friedrich, Dennis
Borgwardt, Mario
Mazzio, Katherine A.
Amsalem, Patrick
Nguyen, Minh Hai
Daiber, Benjamin
Mews, Mathias
Rappich, Jörg
Ruske, Florian
Eichberger, Rainer
Ehrler, Bruno
Lips, Klaus
Source :
The Journal of Physical Chemistry - Part C; December 2020, Vol. 124 Issue: 51 p27867-27881, 15p
Publication Year :
2020

Abstract

The rational combination of tetracene (Tc) with crystalline silicon (c-Si) could greatly enhance c-Si solar cell efficiencies via singlet fission. The Tc/c-Si energy-level alignment (ELA) is thought to be central to controlling the required interface transfer processes. We modified hydrogen-terminated c-Si (H–Si) with 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6TCNNQ), C60, or NF3and probed the effect on the c-Si surface chemistry, the Tc/c-Si ELA, the Tc morphology, and solar cell characteristics using ultraviolet and X-ray photoelectron spectroscopy, atomic force microscopy, X-ray diffraction, photoluminescence transients, device measurements, and transfer matrix-optical modeling. Submonolayer interlayers of F6TCNNQ shifted the Tc/H–Si(111) ELA by up to 0.55 eV. C60showed no notable effect on the ELA and proved detrimental for the Tc film morphology and solar cell performance. Neither F6TCNNQ nor C60improved the Tc-related photocurrent significantly. NF3CVD substituted the H-termination of H–Si(100) with more electronegative species and resulted in work functions as high as 6 eV. This changed the Tc/H–Si(100) ELA by up to 0.45 eV. NF3plasma from a remote source caused pronounced c-Si oxidation and a diminished c-Si photoluminescence lifetime, which was not observed for NF3plasma created in close proximity to the c-Si surface or neutral NF3. We discuss possible reasons for why the improved ELA does not lead to an improved singlet fission harvest.

Details

Language :
English
ISSN :
19327447 and 19327455
Volume :
124
Issue :
51
Database :
Supplemental Index
Journal :
The Journal of Physical Chemistry - Part C
Publication Type :
Periodical
Accession number :
ejs54836519
Full Text :
https://doi.org/10.1021/acs.jpcc.0c08104