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Optimized design of 4H-SiC UMOSFET for high breakdown voltage
- Source :
- Proceedings of SPIE; November 2020, Vol. 11567 Issue: 1 p115673Y-115673Y-6, 1041064p
- Publication Year :
- 2020
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 11567
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs54679140
- Full Text :
- https://doi.org/10.1117/12.2580265