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Violet and UV light-emitting diodes grown on ZrB<INF>2</INF> substrate

Authors :
Kamiyama, S.
Takanami, S.
Tomida, Y.
Iida, K.
Kawashima, T.
Fukui, S.
Iwaya, M.
Kinoshita, H.
Matsuda, T.
Yasuda, T.
Otani, S.
Amano, H.
Akasaki, I.
Source :
Physica Status Solidi (A) - Applications and Materials Science; November 2003, Vol. 200 Issue: 1 p67-70, 4p
Publication Year :
2003

Abstract

Using the two-step metalorganic vapor phase epitaxial growth on ZrB&lt;INF&gt;2&lt;/INF&gt; substrate, we demonstrate violet and UV light-emitting diodes (LEDs). The violet LED shows extremely linear L–I characteristics and a sharp single spectrum with a peak wavelength of 410 nm. In the UV-LED on ZrB&lt;INF&gt;2&lt;/INF&gt;, we confirmed that the vertical conduction through the ZrB&lt;INF&gt;2&lt;/INF&gt;/AlGaN interface is superior to the conventional lateral conduction. The use of ZrB&lt;INF&gt;2&lt;/INF&gt; substrate is promising for UV light emitting devices with low operating voltage. (&#169; 2003 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Details

Language :
English
ISSN :
18626300 and 18626319
Volume :
200
Issue :
1
Database :
Supplemental Index
Journal :
Physica Status Solidi (A) - Applications and Materials Science
Publication Type :
Periodical
Accession number :
ejs5463725
Full Text :
https://doi.org/10.1002/pssa.200303317