Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and open-circuit voltage (VOC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The JSCof the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of JSC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.