GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6AND C2H2AT 873 K

Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) method, using Si2H6and C2H2as reactant gases at 873 K in a horizontal tubular reactor. Kinetic studies using gas chromatography were used to understand the gas-phase and surface chemistry of Si2H6in the presence of C2H2. The results showed that the direct reaction of Si2H6on substrate surface was strongly retarded by C2H2and that the film formation species was either SiH2or a gas-phase intermediate derived from Si2H6and C2H2, having a sticking probability of 0.1.