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Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
- Source :
- Journal de Physique IV - Proceedings; December 1993, Vol. 3 Issue: 1 pC5-351-C5-354, 3515350p
- Publication Year :
- 1993
-
Abstract
- We have investigated the exciton spin dynamics in strained InxGa1-xAs/GaAs (x ≤ 0.2) quantum wells. The variation of the initial polarization with the excitation energy is well correlated with the increasing mixing of the valence band states. The time behavior of the depolarization curves clearly demonstrates the prime importance of the hole and exciton spin relaxation processes.
Details
- Language :
- English
- ISSN :
- 11554339 and 17647177
- Volume :
- 3
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Journal de Physique IV - Proceedings
- Publication Type :
- Periodical
- Accession number :
- ejs53453265
- Full Text :
- https://doi.org/10.1051/jp4:1993573