Si/Si1-xGex/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice

MLA

Murota, J., et al. “Si/Si1-XGex/Si Heterostructure Growth by Ultraclean Low-Temperature LPCVD for the Fabrication of Novel Heterodevice.” Journal de Physique IV - Proceedings, vol. 3, no. 1, Dec. 1993, pp. C3-403-C3-410. EBSCOhost, https://doi.org/10.1051/jp4:1993356.

APA

Murota, J., Maeda, T., Goto, K., Sakamoto, K., Aizawa, K., Ushioda, S., Ono, S., Murota, J., Maeda, T., Goto, K., Sakamoto, K., Aizawa, K., Ushioda, S., & Ono, S. (1993). Si/Si1-xGex/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice. Journal de Physique IV - Proceedings, 3(1), C3-403-C3-410. https://doi.org/10.1051/jp4:1993356

Chicago

Murota, J., T. Maeda, K. Goto, K. Sakamoto, K. Aizawa, S. Ushioda, S. Ono, et al. 1993. “Si/Si1-XGex/Si Heterostructure Growth by Ultraclean Low-Temperature LPCVD for the Fabrication of Novel Heterodevice.” Journal de Physique IV - Proceedings 3 (1): C3-403-C3-410. doi:10.1051/jp4:1993356.