Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

This work studies the influence of mobility degradation on the effective channel length Leff( Leff= Lm-ΔL) extraction in submicron fully depleted SOI MOSFETs at 77 K. Second-order effects can cause mobility degradation, mainly at 77 K, and if standard techniques have been used, negative values of ΔL can be obtained. It will be shown that this result can be caused by a length-dependent mobility degradation factor.